Title :
Modeling, Simulation, and Validation of a Power SiC BJT
Author :
Gachovska, Tanya ; Hudgins, Jerry L. ; Bryant, Angus ; Santi, Enrico ; Mantooth, H. Alan ; Agarwal, Anant K.
Author_Institution :
Dept. of Electr. Eng., Univ. of Nebraska-Lincoln, Lincoln, NE, USA
Abstract :
This paper presents a physics-based model of a silicon carbide bipolar junction transistor and verification of its validity through experimental testing. The Fourier series solution is used to solve the ambipolar diffusion equation in the transistor collector region. The model is realized using MATLAB and Simulink. The experimental results of static operation and also the simulated and experimental results of switching waveforms are given.
Keywords :
Fourier series; digital simulation; mathematics computing; power bipolar transistors; silicon compounds; wide band gap semiconductors; Fourier series solution; Matlab; SiC; Simulink; ambipolar diffusion equation; physics-based model silicon carbide bipolar junction transistor; power BJT; transistor collector region; Charge carrier processes; Doping; Equations; Integrated circuit modeling; Junctions; Mathematical model; Silicon carbide; Silicon carbide (SiC) bipolar junction transistor (BJT); power semiconductor modeling;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2012.2190622
