Title :
A column-base InP lateral bipolar transistor
Author :
Tacano, M. ; Tamura, Akihiro ; Oigawa, Kinya ; Uekusa, Shin-ichiro ; Sugiyama, Yoshinobu
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
Abstract :
An InP lateral bipolar transistor has been successfully fabricated on a semi-insulating substrate by implanting Si/sup +/ as the emitter and collector contacts and Mg/sup +/ as the column base. An array of 33 1- mu m-diameter columns with 1- mu m separation between each was formed between the emitter-collector spacing of 3 mu m. A current gain of 290 was obtained at 77 K; it was over 12 at room temperature.<>
Keywords :
III-V semiconductors; bipolar transistors; indium compounds; 1 micron; 3 micron; 77 K; InP; collector contacts; column base; current gain; emitter contacts; emitter-collector spacing; lateral bipolar transistor; semi-insulating substrate; Annealing; Bipolar transistors; FETs; Fabrication; Gallium arsenide; Indium phosphide; Laboratories; Plasma temperature; Silicon compounds; Substrates;
Journal_Title :
Electron Device Letters, IEEE
