DocumentCode
1481013
Title
A column-base InP lateral bipolar transistor
Author
Tacano, M. ; Tamura, Akihiro ; Oigawa, Kinya ; Uekusa, Shin-ichiro ; Sugiyama, Yoshinobu
Author_Institution
Electrotech. Lab., Ibaraki, Japan
Volume
9
Issue
8
fYear
1988
Firstpage
380
Lastpage
382
Abstract
An InP lateral bipolar transistor has been successfully fabricated on a semi-insulating substrate by implanting Si/sup +/ as the emitter and collector contacts and Mg/sup +/ as the column base. An array of 33 1- mu m-diameter columns with 1- mu m separation between each was formed between the emitter-collector spacing of 3 mu m. A current gain of 290 was obtained at 77 K; it was over 12 at room temperature.<>
Keywords
III-V semiconductors; bipolar transistors; indium compounds; 1 micron; 3 micron; 77 K; InP; collector contacts; column base; current gain; emitter contacts; emitter-collector spacing; lateral bipolar transistor; semi-insulating substrate; Annealing; Bipolar transistors; FETs; Fabrication; Gallium arsenide; Indium phosphide; Laboratories; Plasma temperature; Silicon compounds; Substrates;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.750
Filename
750
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