A 2.1 to 6 GHz Tunable-band LNA With Adaptive Frequency Responses by Transistor Size Scaling

Author

Wang, Yu-Hsiang ; Lin, Kuan-Ting ; Wang, Tao ; Chiu, Hung-Wei ; Chen, Hsiao-Chin ; Lu, Shey-Shi

Author_Institution

Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

20

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

346

Lastpage

348

Abstract

A 2.1 to 6 GHz tunable-band LNA by using transistor-size scaling technique is realized in 90 nm CMOS technology, which adopts a scalable-size transistor mimicked by the parallel-connected transistors with binary weighted device sizes. In the 16 programmable bands located in the frequencies of interest, the S21 varies in the range from 15.1 to 16.9 dB, and the NF is from 2.16 to 2.81 dB. This tunable -band LNA occupies only 0.23 mm², which is readily compact compared with the prior arts of passive components switchable LNAs.

Keywords

CMOS integrated circuits; frequency response; low noise amplifiers; scaling circuits; transistor circuits; transistors; CMOS technology; adaptive frequency response; binary weighted device sizes; frequency 2.1 GHz to 6 GHz; parallel-connected transistors; passive components; programmable bands; size 90 nm; transistor size scaling technique; tunable-band LNA; Band switching; CMOS; low noise amplifier (LNA); transistor size scaling; wide band amplifier;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2010.2047527

Filename

5456196