Title :
A 2.1 to 6 GHz Tunable-band LNA With Adaptive Frequency Responses by Transistor Size Scaling
Author :
Wang, Yu-Hsiang ; Lin, Kuan-Ting ; Wang, Tao ; Chiu, Hung-Wei ; Chen, Hsiao-Chin ; Lu, Shey-Shi
Author_Institution :
Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
6/1/2010 12:00:00 AM
Abstract :
A 2.1 to 6 GHz tunable-band LNA by using transistor-size scaling technique is realized in 90 nm CMOS technology, which adopts a scalable-size transistor mimicked by the parallel-connected transistors with binary weighted device sizes. In the 16 programmable bands located in the frequencies of interest, the S21 varies in the range from 15.1 to 16.9 dB, and the NF is from 2.16 to 2.81 dB. This tunable -band LNA occupies only 0.23 mm2, which is readily compact compared with the prior arts of passive components switchable LNAs.
Keywords :
CMOS integrated circuits; frequency response; low noise amplifiers; scaling circuits; transistor circuits; transistors; CMOS technology; adaptive frequency response; binary weighted device sizes; frequency 2.1 GHz to 6 GHz; parallel-connected transistors; passive components; programmable bands; size 90 nm; transistor size scaling technique; tunable-band LNA; Band switching; CMOS; low noise amplifier (LNA); transistor size scaling; wide band amplifier;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2010.2047527
