DocumentCode :
1481139
Title :
Hierarchical symbolic design methodology for large-scale data paths
Author :
Usami, Kimiyoshi ; Sugeno, Yukio ; Matsumoto, Nobu ; Mori, Shojiro
Author_Institution :
Toshiba Microelectron. Corp., Kawasaki, Japan
Volume :
26
Issue :
3
fYear :
1991
fDate :
3/1/1991 12:00:00 AM
Firstpage :
381
Lastpage :
385
Abstract :
A symbolic layout methodology for large-scale data paths is proposed. A gate-level symbolic expression, the logic transformation diagram, is adopted as a layout input. A mask layout is automatically generated from the symbolic expression. A hierarchical design method is used in combination with a bit-slice regular structure and a performance-determining irregular structure. A 1-b field of the bit-slice structure is designed symbolically and then compacted, and finally the entire data path is generated. Performance-determining irregular macrocells, such as adders with carry-look-ahead (CLA) circuits, are handcrafted independently and combined with the entire data path at the final step. To achieve high density and high performance, effort is focused on optimizing the layout of the 1-b field. Iteration of the editing and compaction loop can be executed in a short turnaround time (TAT). By the proposed methodology, a data path containing 21 K transistors in a 32-b microprocessor has been successfully produced. Design productivity has been increased tenfold, achieving a layout density equivalent to that of the handcrafted design
Keywords :
adders; carry logic; cellular arrays; circuit layout; logic design; masks; adders; bit-slice regular structure; carry-look-ahead; compaction loop; density; gate-level symbolic expression; irregular macrocells; large-scale data paths; layout density; logic transformation diagram; mask layout; performance-determining irregular structure; symbolic design methodology; turnaround time; Adders; Compaction; Design methodology; Integrated circuit interconnections; Large-scale systems; Macrocell networks; Microprocessors; Process design; Productivity; Semiconductor devices;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.75017
Filename :
75017
Link To Document :
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