DocumentCode :
1481202
Title :
A Comprehensive Study of High- 
Island-Gate Varactors (IGVs) for CMOS Millimeter-Wave Applications
Author :
Oh, Yongho ; Rieh, Jae-Sung
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Volume :
59
Issue :
6
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
1520
Lastpage :
1528
Abstract :
This paper presents a comprehensive study on the high-Q island-gate varactor (IGV), which includes a comparison with the conventional multifinger varactors (MFVs) and analyses on the effect of structural variations on the varactor performance. The study shows that the IGV exhibits smaller Rs and larger Q factor compared to the MFV, while its capacitance tuning ratio is smaller. The effect of the dimension variation and shape of the gate island, as well as the gate thickness, is substantial and the observed trends can be exploited for IGV optimization. This work indicates that the IGV is a highly promising option for millimeter-wave applications.
Keywords :
CMOS integrated circuits; field effect MIMIC; varactors; CMOS millimeter-wave application; capacitance tuning ratio; high-Q island-gate varactor; structural variation; Capacitance; Logic gates; Metals; Resistance; Tuning; Varactors; Wiring; $Q$
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2011.2117437
Filename :
5739134
Link To Document :
