DocumentCode :
1481343
Title :
Design techniques for integrated microwave amplifiers using gallium arsenide field-effect transistors
Author :
Hewitt, S.J. ; Pengelly, R.S.
Volume :
46
Issue :
10
fYear :
1976
fDate :
10/1/1976 12:00:00 AM
Firstpage :
463
Lastpage :
471
Abstract :
This paper reviews the technology and methods used in the design of integrated microwave transistor amplifiers, and describes some examples in which gallium arsenide field effect transistors are used in both hybrid and monolithic forms of integrated circuit.
Keywords :
Schottky gate field effect transistors; field effect integrated circuits; microwave amplifiers; microwave integrated circuits; solid-state microwave circuits; GaAs FETs; broad band amplifier design; hybrid; integrated microwave transistor amplifiers; monolithic; power gain; stability;
fLanguage :
English
Journal_Title :
Radio and Electronic Engineer
Publisher :
iet
ISSN :
0033-7722
Type :
jour
DOI :
10.1049/ree.1976.0070
Filename :
5268896
Link To Document :
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