• DocumentCode
    1481343
  • Title

    Design techniques for integrated microwave amplifiers using gallium arsenide field-effect transistors

  • Author

    Hewitt, S.J. ; Pengelly, R.S.

  • Volume
    46
  • Issue
    10
  • fYear
    1976
  • fDate
    10/1/1976 12:00:00 AM
  • Firstpage
    463
  • Lastpage
    471
  • Abstract
    This paper reviews the technology and methods used in the design of integrated microwave transistor amplifiers, and describes some examples in which gallium arsenide field effect transistors are used in both hybrid and monolithic forms of integrated circuit.
  • Keywords
    Schottky gate field effect transistors; field effect integrated circuits; microwave amplifiers; microwave integrated circuits; solid-state microwave circuits; GaAs FETs; broad band amplifier design; hybrid; integrated microwave transistor amplifiers; monolithic; power gain; stability;
  • fLanguage
    English
  • Journal_Title
    Radio and Electronic Engineer
  • Publisher
    iet
  • ISSN
    0033-7722
  • Type

    jour

  • DOI
    10.1049/ree.1976.0070
  • Filename
    5268896
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1481343