DocumentCode
1481437
Title
Evaluation of MESFET nonlinear intermodulation distortion reduction by channel-doping control
Author
Pedro, José Carlos
Author_Institution
Inst. de Telecominicacoes, Aveiro Univ., Portugal
Volume
45
Issue
11
fYear
1997
fDate
11/1/1997 12:00:00 AM
Firstpage
1989
Lastpage
1997
Abstract
This paper is intended to evaluate the linearity that can be provided by general-purpose MESFETs. By a simple physics-based analysis and a practical amplifier design, it will be shown how educated device and bias-point selection can approximate intermodulation distortion (IMD) performance of some normal channel-doping profiles, for which previous theories would not be able to predict good IMD performance, to the one expected from MESFET devices with specially tailored doping profiles
Keywords
Schottky gate field effect transistors; amplifiers; doping profiles; intermodulation distortion; semiconductor doping; MESFET amplifier; bias point; channel doping profile; linearity; nonlinear intermodulation distortion; Circuits; Design automation; Doping profiles; Intermodulation distortion; Linearity; MESFETs; Nonlinear distortion; Performance analysis; Power amplifiers; Semiconductor process modeling;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.644210
Filename
644210
Link To Document