• DocumentCode
    1481486
  • Title

    Low-Temperature Fabrication and Characteristics of Lanthanum Indium Zinc Oxide Thin-Film Transistors

  • Author

    Park, Jae Chul ; Kim, Sang Wook ; Kim, Chang Jung ; Lee, Ho-Nyeon

  • Author_Institution
    Semicond. Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea
  • Volume
    33
  • Issue
    5
  • fYear
    2012
  • fDate
    5/1/2012 12:00:00 AM
  • Firstpage
    685
  • Lastpage
    687
  • Abstract
    We fabricated lanthanum indium zinc oxide (IZO) (La-IZO) thin-film transistors (TFTs) using radio frequency cosputtering of IZO and lanthanum. The field-effect mobility and switching ratio of the La-IZO TFTs were 4.2 cm2·V-1·s-1 and on the order of 108, respectively, before thermal annealing and 3.02 cm2·V-1·s-1 and on the order of 1010, respectively, after thermal annealing at 150°C in air. Our La-IZO TFTs had better thermal stability than pure-IZO TFTs due to the stable ionic bond between La and O.
  • Keywords
    annealing; indium compounds; lanthanum; sputtering; thermal stability; thin film transistors; La-IZO; TFT; field effect mobility; lanthanum indium zinc oxide; low-temperature fabrication; radio frequency cosputtering; thermal annealing; thermal stability; thin film transistors; Annealing; Logic gates; Sputtering; Switches; Thermal stability; Thin film transistors; Indium; lanthanum; thin-film transistors (TFTs); zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2188849
  • Filename
    6177216
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1481486