DocumentCode :
1481497
Title :
Self-Selective Characteristics of Nanoscale 
Devices for High-Density ReRAM Applications
Author :
Son, Myungwoo ; Liu, Xinjun ; Sadaf, Sharif Md ; Lee, Daeseok ; Park, Sangsu ; Lee, Wootae ; Kim, Seonghyun ; Park, Jubong ; Shin, Jungho ; Jung, Seungjae ; Ham, Moon-Ho ; Hwang, Hyunsang
Author_Institution :
Dept. of Nanobio Mater. & Electron., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Volume :
33
Issue :
5
fYear :
2012
fDate :
5/1/2012 12:00:00 AM
Firstpage :
718
Lastpage :
720
Abstract :
We herein present a hybrid-type memory device in which threshold switching and bipolar resistive switching are combined. The nanoscale vanadium oxide (VOx) device simultaneously exhibited self-selective performance and memory switching by electroforming. By using W instead of Pt for the top electrode, memory performance was improved in terms of cycling, pulse endurance, and retention properties attributed to a self-formed WOx/VOx interface. Such a phenomenon in a simple metal-oxide-metal structure provides a good potential for future high-density cross-point memory devices by avoiding the sneak-path problem.
Keywords :
electroforming; memory architecture; nanoelectronics; random-access storage; tungsten compounds; vanadium compounds; WOx-VOx; bipolar resistive switching; cycling; electrode; electroforming; high-density ReRAM application; high-density cross-point memory device; hybrid-type memory device; memory performance; memory switching; metal-oxide-metal structure; nanoscale device; pulse endurance; retention properties; self-formed interface; self-selective characteristics; self-selective performance; threshold switching; Arrays; Materials; Metals; Nanoscale devices; Performance evaluation; Resistance; Switches; Resistive random access memory (ReRAM); selection property; vanadium oxide $(hbox{VO}_{x})$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2188989
Filename :
6177218
Link To Document :
