AlInAs/GaInAs HBT IC technology

Author

Jensen, Joseph F. ; Stanchina, William E. ; Metzger, Robert A. ; Rensch, David B. ; Lohr, Ross F. ; Quen, Renee Wong ; Pierce, Michael W. ; Allen, Young K. ; Lou, Peggy F.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

Volume

26

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

415

Lastpage

421

Abstract

Integrated circuits (ICs) fabricated with AlGaAs/GaInAs heterojunction bipolar transistors (HBTs) lattice matched to InP substrates are described. The transistors used in this work consisted of an abrupt emitter-base junction design. A cutoff frequency and a maximum frequency of oscillation of 90 and 70 GHz, respectively, have been achieved with a 2×5-μm² emitter size HBT. Current-mode logic (CML) was used to demonstrate ring oscillators, flip-flop divider circuits, and dual-modulus prescalers. The ring oscillator demonstrated a 15.8-ps gate delay, the CML flip-flop divider circuits demonstrated 24.8-GHz toggle rates, and the 4/5 and 8/9 dual-modulus prescalers consisting of 106 and 124 transistors, respectively, operated at clock rates of up to 9 GHz

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated logic circuits; 70 GHz; 9 GHz; 90 GHz; AlGaAs-GaInAs-InP; CML; HBT IC technology; InP substrates; abrupt emitter-base junction design; current mode logic; cutoff frequency; dual-modulus prescalers; flip-flop divider circuits; heterojunction bipolar transistors; lattice matched; maximum frequency; ring oscillators; Bipolar integrated circuits; Cutoff frequency; Delay; Flip-flops; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; Lattices; Logic circuits; Ring oscillators;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.75028

Filename

75028