A 0.8-μm advanced single-poly BiCMOS technology for high-density and high-performance applications

Author

Iranmanesh, Ali A. ; Ilderem, Vida ; Biswal, Madan ; Bastani, Bami

Author_Institution

Nat. Semicond. Corp., Santa Clara, CA, USA

Volume

26

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

422

Lastpage

426

Abstract

A single-poly, 0.8-μm advanced BiCMOS technology, ABiC IV, is described. It has both high-performance CMOS and 15-GHz bipolar transistors. The process described has been developed for high-performance application-specific IC (ASIC) applications with emphasis on embedded CMOS, BiCMOS, or emitter-coupled logic (ECL) memory as well as BiCMOS and ECL gate arrays and standard cells. The key features of this BiCMOS process are twin buried layers, low encroachment recessed oxide isolation, a double-diffused bipolar process, a single-poly architecture with silicided local interconnection, and four levels of metallization with tungsten plugs. Ring-oscillator gate delays of about 125 ps for BiCMOS, less than 90 ps for CMOS, and about 48 ps for ECL were obtained with this process

Keywords

BIMOS integrated circuits; application specific integrated circuits; emitter-coupled logic; integrated circuit technology; integrated memory circuits; logic arrays; 0.8 micron; ABiC IV; ASIC; ECL gate arrays; ECL memory; W plugs; advanced polysilicon technology; application-specific IC; bipolar transistors; digital IC; double-diffused bipolar process; embedded CMOS; emitter-coupled logic; four level metallisation; high-density; high-performance CMOS; high-performance applications; low encroachment recessed oxide isolation; silicided local interconnection; single-poly BiCMOS technology; twin buried layers; Application specific integrated circuits; BiCMOS integrated circuits; Bipolar transistors; CMOS integrated circuits; CMOS logic circuits; CMOS process; CMOS technology; Logic arrays; Metallization; Standards development;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.75029

Filename

75029