• DocumentCode
    1481757
  • Title

    Assessment of breakdown voltage of SF6/N2 gas mixtures under non-uniform field

  • Author

    Mahdy, A.M.

  • Author_Institution
    Dept. of Electr. Eng., Cairo Univ., Giza, Egypt
  • Volume
    18
  • Issue
    2
  • fYear
    2011
  • fDate
    4/1/2011 12:00:00 AM
  • Firstpage
    607
  • Lastpage
    612
  • Abstract
    The dielectric breakdown of SF6/N2 gas mixture insulating system is believed to be sensitive to local irregularity of the electric field which may result from the presence of defects such as contaminants adhering to the electrode surface and surface roughness. Normally the surface roughness is produced from machine finishing and due to the aging of the system. This paper models the insulation breakdown mechanism of SF6 gas mixture in the presence of surface roughness for non- uniform field gaps. The electric field inside the gap is computed by using the charge simulation method taking into consideration the perturbations of the field in the presence surface roughness. The breakdown voltage is assessed by applying the criterion of slightly and highly divergent field and using the experimental results of figure-of-merit which is a measure of quantifying of the sensitivity of the gas to the effects of the electrode surface roughness.
  • Keywords
    SF6 insulation; electric breakdown; finishing; gas mixtures; surface roughness; SF6 gas mixture; breakdown voltage assessment; charge simulation method; dielectric breakdown; electric field irregularity; electrode surface roughness; field perturbations; gas mixture insulating system; insulation breakdown mechanism; machine finishing; nonuniform field gaps; Electric breakdown; Electric fields; Electrodes; Mathematical model; Rough surfaces; Sulfur hexafluoride; Surface roughness; GIS apparatus; SF6-gas mixture; breakdown voltage assessment; charge simulation method; roughness effect;
  • fLanguage
    English
  • Journal_Title
    Dielectrics and Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1070-9878
  • Type

    jour

  • DOI
    10.1109/TDEI.2011.5739467
  • Filename
    5739467