DocumentCode :
1481757
Title :
Assessment of breakdown voltage of SF6/N2 gas mixtures under non-uniform field
Author :
Mahdy, A.M.
Author_Institution :
Dept. of Electr. Eng., Cairo Univ., Giza, Egypt
Volume :
18
Issue :
2
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
607
Lastpage :
612
Abstract :
The dielectric breakdown of SF6/N2 gas mixture insulating system is believed to be sensitive to local irregularity of the electric field which may result from the presence of defects such as contaminants adhering to the electrode surface and surface roughness. Normally the surface roughness is produced from machine finishing and due to the aging of the system. This paper models the insulation breakdown mechanism of SF6 gas mixture in the presence of surface roughness for non- uniform field gaps. The electric field inside the gap is computed by using the charge simulation method taking into consideration the perturbations of the field in the presence surface roughness. The breakdown voltage is assessed by applying the criterion of slightly and highly divergent field and using the experimental results of figure-of-merit which is a measure of quantifying of the sensitivity of the gas to the effects of the electrode surface roughness.
Keywords :
SF6 insulation; electric breakdown; finishing; gas mixtures; surface roughness; SF6 gas mixture; breakdown voltage assessment; charge simulation method; dielectric breakdown; electric field irregularity; electrode surface roughness; field perturbations; gas mixture insulating system; insulation breakdown mechanism; machine finishing; nonuniform field gaps; Electric breakdown; Electric fields; Electrodes; Mathematical model; Rough surfaces; Sulfur hexafluoride; Surface roughness; GIS apparatus; SF6-gas mixture; breakdown voltage assessment; charge simulation method; roughness effect;
fLanguage :
English
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
Publisher :
ieee
ISSN :
1070-9878
Type :
jour
DOI :
10.1109/TDEI.2011.5739467
Filename :
5739467
Link To Document :
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