Ballistic-Mode Plasma-Based Ion Implantation for Surface-Resistivity Modification of Polyimide Film

Author

Park, Byungjae ; Kim, Jeehyun ; Cho, Moohyun ; Namkung, Won ; Kim, Sang Jung ; Yoo, Hyo Yol

Author_Institution

Dept. of Phys., POSTECH, Pohang, South Korea

Volume

40

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

1749

Lastpage

1752

Abstract

Plasma-based ion implantation (PBII) is the well-established technique for material surface modification. In this paper, we described the ballistic-mode PBII process in which repetitive high-voltage pulses are applied to the grid a few centimeters from a polyimide (PI) film target. The high-voltage pulse applied to the grid has the peak values of 30 kV, width of 2.5 μs, rise time of 1.5 μs, and fall time of 0.5 or 40 μs. In this process, ions propagate ballistically from a grid to the PI film and modify the surface resistivity of the PI film. The efficiency of surface-resistivity modification depends on the fall time of the pulse applied to the grid. The ballistic-mode PBII process affects the surface characteristics of PI to a depth of 90 nm.

Keywords

high-voltage techniques; plasma immersion ion implantation; polymer films; surface resistance; surface treatment; PBII; ballistic-mode plasma-based ion implantation; grid; high-voltage pulses; ion propagation; polyimide film; size 90 nm; surface characteristics; surface-resistivity; time 0.5 mus; time 1.5 mus; time 40 mus; voltage 30 kV; Conductivity; Electrostatic discharges; Ion implantation; Plasmas; Polymers; Surface treatment; Insulator surface modification; ion implantation; pulse modulator; surface resistivity;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2012.2190526

Filename

6177274