Title :
A 4 Mb NAND EEPROM with tight programmed Vt distribution
Author :
Momodomi, Masaki ; Tanaka, Tomoharu ; Iwata, Yoshihisa ; Tanaka, Yoshiyuki ; Oodaira, Hideko ; Itoh, Yasuo ; Shirota, Riichiro ; Ohuchi, Kazunori ; Masuoka, Fujio
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fDate :
4/1/1991 12:00:00 AM
Abstract :
Described is a 5-V-only 4-Mb (512K×8 b) NAND EEPROM (electrically erasable programmable ROM) with tight programmed threshold voltage (Vt) distribution, controlled by a novel program-verify technique. A tight programmed Vt distribution width of 0.8 V for the 4 Mb cell array is achieved. By introducing a compact row-decoder circuit, a die size of 7.28 mm×15.31 mm is achieved using 1.0 μm design rules. A unique twin p-well structure has made it possible to realize low-power 5 V-only erase/program operation easily and to achieve 100 K-cycle endurance
Keywords :
CMOS integrated circuits; EPROM; NAND circuits; VLSI; integrated memory circuits; 1 micron; 4 Mbit; 5 V; NAND EEPROM; electrically erasable programmable ROM; low-power 5 V-only erase/program operation; memory IC; n-well CMOS; program-verify technique; programmed threshold voltage distribution; row-decoder circuit; twin p-well structure; EPROM; Energy consumption; Equivalent circuits; Flash memory; Magnetics; Manufacturing processes; Nonvolatile memory; Portable computers; Threshold voltage; Voltage control;
Journal_Title :
Solid-State Circuits, IEEE Journal of
