Title :
Design and Analysis of a
-band Divide-by-Three Injection-Locked Frequency Divider Using Second Harmonic Enhancement Technique
Author :
Yeh, Yen-Liang ; Chang, Hong-Yeh
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fDate :
6/1/2012 12:00:00 AM
Abstract :
In this paper, we present design and analysis of a W-band divide-by-three injection-locked frequency divider (ILFD) in 90 nm CMOS process. Based on the proposed topology, the locking range can be enhanced without additional dc power consumption due to the boost of the second harmonic in the ILFD, and the small input capacitance is more feasible for W -Band PLL integration. The locking range of the ILFD is investigated to obtain a theoretical model. From the analysis, the locking range is proportional to the device size of the injectors and the amplitude of the injection signal. In addition, the locking range can be enhanced with a proper gate dc bias of the injectors. The measured locking range of the proposed ILFD is from 91.4 to 93.5 GHz without varactor tuning, and the output power is higher than -15 dBm. The core dc power consumption is 1.5 mW with a supply voltage of 0.7 V.
Keywords :
CMOS integrated circuits; field effect MIMIC; frequency dividers; low-power electronics; phase locked loops; CMOS process; W-band PLL integration; W-band frequency divider; dc power consumption; divide-by-three frequency divider; frequency 91.4 GHz to 93.5 GHz; injection-locked frequency divider; power 1.5 mW; second harmonic enhancement; size 90 nm; voltage 0.7 V; Capacitance; Frequency conversion; Harmonic analysis; Inductors; Oscillators; Power demand; Q factor; CMOS; divide-by-three; injection-locked frequency divider (ILFD); phase-locked loop (PLL);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2012.2189244