Monolithic integration of complementary HBTs by selective MOVPE

Author

Slater, David B., Jr. ; Enquist, Paul M. ; Najjar, Fayez E. ; Chen, Mary Y. ; Hutchby, James A.

Author_Institution

Res. Triangle Inst., Research Triangle Park, NC, USA

Volume

11

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

146

Lastpage

148

Abstract

The monolithic integration of n-p-n and p-n-p heterojunction bipolar transistors (HBTs) through the use of selective metal organic vapor phase epitaxial regrowth is discussed. This was accomplished by masking, patterning, and etching a p-n-p HBT wafer and then selectively regrowing an n-p-n structure in the etched areas. The selective epitaxial regrowth did not degrade the current gain of the p-n-p structure. Several complementary amplifier circuits were fabricated and tested successfully, demonstrating the feasibility of a monolithic complementary HBT technology.<>

Keywords

bipolar integrated circuits; heterojunction bipolar transistors; integrated circuit technology; linear integrated circuits; semiconductor growth; vapour phase epitaxial growth; complementary amplifier circuits; etching; heterojunction bipolar transistors; linear ICs; masking; monolithic complementary HBT technology; monolithic integration; n-p-n structure; p-n-p structure; patterning; selective MOVPE; vapor phase epitaxial regrowth; Circuit testing; Circuit topology; Epitaxial growth; Epitaxial layers; Etching; Heterojunction bipolar transistors; Monolithic integrated circuits; Silicon; Substrates; Zinc;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.61774

Filename

61774