Title :
Memristive Device Fundamentals and Modeling: Applications to Circuits and Systems Simulation
Author :
Eshraghian, Kamran ; Kavehei, Omid ; Cho, Kyoung-Rok ; Chappell, James M. ; Iqbal, Azhar ; Al-Sarawi, Said F. ; Abbott, Derek
Author_Institution :
Coll. of Electr. & Inf. Eng., Chungbuk Nat. Univ., Cheongju, South Korea
fDate :
6/1/2012 12:00:00 AM
Abstract :
The nonvolatile memory property of a memristor enables the realization of new methods for a variety of computational engines ranging from innovative memristive-based neuromorphic circuitry through to advanced memory applications. The nanometer-scale feature of the device creates a new opportunity for realization of innovative circuits that in some cases are not possible or have inefficient realization in the present and established design domain. The nature of the boundary, the complexity of the ionic transport and tunneling mechanism, and the nanoscale feature of the memristor introduces challenges in modeling, characterization, and simulation of future circuits and systems. Here, a deeper insight is gained in understanding the device operation, leading to the development of practical models that can be implemented in current computer-aided design (CAD) tools.
Keywords :
circuit CAD; memristors; random-access storage; tunnelling; CAD tool; circuit simulation; computational engine; computer-aided design tool; device nanometer-scale feature; ionic transport complexity; memristive device fundamental; memristive device modeling; memristive-based neuromorphic circuitry; memristor; nonvolatile memory property; system simulation; tunneling mechanism; Integrated circuit modeling; Memristors; Modulation; Nonvolatile memory; Resistance; SPICE; Switches; Tunneling; Conductance modulation index; SPICE modeling; content addressable memory (CAM); memory; memristor; memristor-based content addressable memory (MCAM);
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/JPROC.2012.2188770