Title :
Design of a 1.8 GHz low-noise amplifier for RF front-end in a 0.8 μm CMOS technology
Author :
Park, Sungkyung ; Kim, Wonchan
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
fDate :
2/1/2001 12:00:00 AM
Abstract :
CMOS technologies are widely exploited now in the area of a few-GHz-range radio frequency (RF) circuits as well as in the area of baseband circuits. Accordingly, the CMOS low-noise amplifier (LNA) is gaining its popularity, tailored to the applications such as GSM, PCS, IMT-2000, and wireless LAN. In this paper, compact and comprehensive design strategies for CMOS LNA are presented. Basic topologies are compared and analyzed using key equations newly derived. Using these strategies, an LNA based upon LC resonance using on-chip spiral inductors is designed and investigated. This LNA, targeted for 1.8 GHz PCS, exhibits power gain of about 18 dB and noise figure (NF) of about 2.1 dB by both theory and post-layout simulation under a 0.8-μm CMOS process and 3-V supply
Keywords :
CMOS integrated circuits; UHF amplifiers; VLSI; inductors; integrated circuit design; network topology; noise; personal communication networks; 0.8 mum; 1.8 GHz; CMOS LNA; CMOS technology; GSM; IMT-2000; LC resonance; PCS; RF circuits; RF front-end; UHF; VLSI; baseband circuits; circuit topologies; low-noise amplifier design; noise figure; on-chip spiral inductors; post-layout simulation; power gain; radio frequency circuits; wireless LAN; Baseband; CMOS technology; Circuit topology; Equations; GSM; Low-noise amplifiers; Personal communication networks; Radio frequency; Resonance; Wireless LAN;
Journal_Title :
Consumer Electronics, IEEE Transactions on
