DocumentCode :
1482528
Title :
Stimulated emission on two-dimensional distributed feedback scheme in triangular GaN nanocolumn arrays
Author :
Kouno, T. ; Kishino, Katsumi ; Sakai, Masayuki ; Inose, Yushi ; Kikuchi, A. ; Ema, K.
Author_Institution :
Dept. of Eng. & Appl. Sci., Sophia Univ., Tokyo, Japan
Volume :
46
Issue :
9
fYear :
2010
Firstpage :
644
Lastpage :
645
Abstract :
Triangular GaN nanocolumn arrays, in which InGaN/GaN multiple quantum wells were integrated at the top region of each nanocolumn, were grown by Ti-mask selective-area growth of RF-plasma-assisted molecular beam epitaxy. In the nanocolumn arrays, a strong enhancement in light intensity at the specific wavelength of 479.4 nm was observed under low optical excitation, and then optically pumped stimulated emission occurred at near the specific wavelength (476.3 nm) under high optical excitation with a threshold excitation density of 400 kW/cm2. The light response of the nanocolumn array was numerically analysed by two-dimensional (2D) finite-difference time-domain and 2D plane-wave expansion methods, proving that the stimulated emission occurred in the 2D distributed feedback scheme.
Keywords :
III-V semiconductors; finite difference time-domain analysis; gallium compounds; indium compounds; molecular beam epitaxial growth; plasma materials processing; semiconductor quantum wells; stimulated emission; 2D distributed feedback scheme; 2D finite-difference time-domain method; 2D plane-wave expansion method; InGaN-GaN; RF-plasma-assisted molecular beam epitaxy; mask selective-area growth; multiple quantum wells; optical excitation; optically pumped stimulated emission; threshold excitation density; triangular nanocolumn arrays; wavelength 479.4 nm;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2010.0168
Filename :
5457403
Link To Document :
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