Title :
Time-resolved thermal annealing of interface traps in aluminium gate-silicon oxide-silicon devices
Author :
Burte, E.P. ; Matthies, Pamela
Author_Institution :
Fraunhofer Arbeitsgruppe fur Integrierte Schaltungen, Erlangen, West Germany
fDate :
10/1/1988 12:00:00 AM
Abstract :
The anneal kinetics of interface traps in aluminium gate-silicon oxide-silicon structures has been studied using capacitance-voltage measurements. The capacitors were annealed in forming gaps at temperatures ranging from 250°C to 620°C. AN exponential decay of the trap density with annealing time has been observed. The curve of the equilibrium value of trap density obtained after long annealing times versus temperature shows a U-shaped form with a minimum located near 450°C. A model based on the bimolecular reaction theory is proposed to explain the results obtained
Keywords :
aluminium; annealing; capacitors; electron traps; elemental semiconductors; hole traps; interface electron states; metal-insulator-semiconductor structures; semiconductor technology; silicon; silicon compounds; 250 to 620 degC; Al-SiO2-Si; MOS structure; aluminium gate-silicon oxide-silicon devices; anneal kinetics; annealing time; bimolecular reaction theory; capacitance-voltage measurements; capacitors; forming gaps; interface traps; semiconductors; thermal annealing; trap density; Aluminum; Annealing; Atomic measurements; Electron traps; Hydrogen; Kinetic theory; Nitrogen; Silicon; Substrates; Temperature distribution;
Journal_Title :
Nuclear Science, IEEE Transactions on
