• DocumentCode
    1482691
  • Title

    The temperature dependence of the low-frequency characteristics of junction field-effect transistors

  • Author

    Grimbleby, J.B. ; Sanghera, G.S.

  • Volume
    47
  • Issue
    6
  • fYear
    1977
  • fDate
    6/1/1977 12:00:00 AM
  • Firstpage
    277
  • Lastpage
    282
  • Abstract
    A discussion is given of the factors determining the temperature dependence of the low-frequency junction field-effect transistor characteristic. The results of measurements of the temperature coefficient of the pinch-off voltage and the channel mobility for a number of 2N3819 and 2N3820 transistors are presented and these are seen to be in disagreement with values that have been assumed previously. The theoretical and practical considerations in obtaining a zero temperature coefficient are discussed in some detail.
  • Keywords
    junction gate field effect transistors; 2N3819; 2N3820; channel mobility; junction FET; low frequency characteristics; temperature coefficient; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Radio and Electronic Engineer
  • Publisher
    iet
  • ISSN
    0033-7722
  • Type

    jour

  • DOI
    10.1049/ree.1977.0041
  • Filename
    5269124