Title :
The temperature dependence of the low-frequency characteristics of junction field-effect transistors
Author :
Grimbleby, J.B. ; Sanghera, G.S.
fDate :
6/1/1977 12:00:00 AM
Abstract :
A discussion is given of the factors determining the temperature dependence of the low-frequency junction field-effect transistor characteristic. The results of measurements of the temperature coefficient of the pinch-off voltage and the channel mobility for a number of 2N3819 and 2N3820 transistors are presented and these are seen to be in disagreement with values that have been assumed previously. The theoretical and practical considerations in obtaining a zero temperature coefficient are discussed in some detail.
Keywords :
junction gate field effect transistors; 2N3819; 2N3820; channel mobility; junction FET; low frequency characteristics; temperature coefficient; temperature dependence;
Journal_Title :
Radio and Electronic Engineer
DOI :
10.1049/ree.1977.0041