DocumentCode
1482691
Title
The temperature dependence of the low-frequency characteristics of junction field-effect transistors
Author
Grimbleby, J.B. ; Sanghera, G.S.
Volume
47
Issue
6
fYear
1977
fDate
6/1/1977 12:00:00 AM
Firstpage
277
Lastpage
282
Abstract
A discussion is given of the factors determining the temperature dependence of the low-frequency junction field-effect transistor characteristic. The results of measurements of the temperature coefficient of the pinch-off voltage and the channel mobility for a number of 2N3819 and 2N3820 transistors are presented and these are seen to be in disagreement with values that have been assumed previously. The theoretical and practical considerations in obtaining a zero temperature coefficient are discussed in some detail.
Keywords
junction gate field effect transistors; 2N3819; 2N3820; channel mobility; junction FET; low frequency characteristics; temperature coefficient; temperature dependence;
fLanguage
English
Journal_Title
Radio and Electronic Engineer
Publisher
iet
ISSN
0033-7722
Type
jour
DOI
10.1049/ree.1977.0041
Filename
5269124
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