Title :
High-performance GaAs MESFETs fabricated on misoriented
Author :
Lo, Y.H. ; Harbison, J. ; Abeles, Joseph H. ; Lee, Tien Pei ; Nahory, Robert E.
Author_Institution :
Bell Commun. Res., Red Bank, NJ, USA
Abstract :
MBE (molecular-beam-epitaxially)-grown GaAs MESFETs with 1.3 mu m gate length were fabricated on a
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; 1.3 micron; 11 GHz; DC; GaAs; InP; MBE; MESFETs; cutoff frequency; heteroepitaxy; microwave characteristics; misoriented; transconductance; Cutoff frequency; Gallium arsenide; Indium phosphide; MESFETs; Microwave devices; Molecular beam epitaxial growth; Optical films; Optoelectronic devices; Semiconductor films; Substrates;
Journal_Title :
Electron Device Letters, IEEE
