Very-high-speed silicon-on-sapphire integrated circuits

Very-high-speed silicon-on-sapphire (s.o.s.) n¿channel m.o.s.f.e.t.s have been fabricated which demonstrated a maximum oscillating frequency of approximately 6-4 GHz. These m.o.s.f.e.t.s¿test transistors on an integrated circuit¿were fabricated with a process which can be used to fabricate high¿speed integrated circuits. Spacecraft data processing requirements are evolving to indicate the need for very-high-speed devices which are capable of being integrated into large¿scale circuits. Improvements in high-speed data processing communications systems are badly needed. Many of these applications will be met be very-high-speed s.o.s.integrated circuits.