Title :
A new approach to optimizing the base profile for high-speed bipolar transistors
Author :
Van Wijnen, Paul J. ; Gardner, Robert D.
Author_Institution :
Philips Components/Signetics, Sunnyvale, CA, USA
fDate :
4/1/1990 12:00:00 AM
Abstract :
It is shown using first-order analytical analysis and extensive device simulations that, for a given base resistance and peak base doping, a uniform base profile gives a higher cutoff frequency than a graded profile. This result is explained by the narrower base width that can be achieved with a uniform profile, which more than compensates for the lack of the aiding electric field present in graded-base transistors.<>
Keywords :
bipolar transistors; doping profiles; semiconductor device models; base profile optimisation; base resistance; base width; cutoff frequency; device simulations; first-order analytical analysis; high-speed bipolar transistors; peak base doping; uniform base profile; Analytical models; Bipolar transistors; Capacitance; Cutoff frequency; Doping profiles; Electric resistance; Electrons; Hafnium; Research and development; Voltage;
Journal_Title :
Electron Device Letters, IEEE
