Title :
High-temperature off-state characteristics of thin-SOI power devices
Author :
Arnold, E. ; Letavic, T. ; Bhimnathwala, H.
Author_Institution :
Philips Lab., Briarcliff Manor, NY, USA
Abstract :
High-temperature off-state characteristics of thin-SOI RESURF LDMOS transistors were studied experimentally and theoretically and compared with off-state characteristics of junction-isolated bulk-Si power devices. At 200/spl deg/C, the off-state leakage current in the SOI devices was approximately 200 times lower than in the bulk-Si devices with a comparable breakdown voltage and on-resistance. At 300/spl deg/C, well beyond the operating range of the bulk devices, the off-state leakage current in the SOI devices was only 1.5 nA/μm. The leakage current appears to scale with the thickness of the SOI layer. The results of this study indicate that LDMOS transistors fabricated in thin SOI layers are well suited for high-temperature power IC applications.
Keywords :
high-temperature effects; leakage currents; power MOSFET; silicon-on-insulator; 200 to 300 C; RESURF LDMOS transistor; breakdown voltage; high-temperature off-state characteristics; leakage current; on-resistance; thin-SOI power device; Design optimization; Dielectric devices; Doping; Leakage current; MOSFETs; Power integrated circuits; Silicon devices; Silicon on insulator technology; Temperature; Voltage;
Journal_Title :
Electron Device Letters, IEEE
