Title :
High-resolution methane spectroscopy using InGaAsSb/AlInGaAsSb laterally-coupled index-grating distributed feedback laser diode at 3.23 μm
Author :
Gupta, J.A. ; Bezinger, A. ; Barrios, P.J. ; Lapointe, J. ; Poitras, D. ; Waldron, Peter
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, ON, Canada
Abstract :
A lateral etched-grating process was used to produce singlemode distributed feedback laser diodes at 3.23 μm. The devices are based on InGaAsSb/AlInGaAsSb type-I quantum well active regions grown on GaSb substrates by molecular beam epitaxy. The lasers were used in high-resolution spectroscopy of methane gas near the v3, R7 vibrational absorption transitions.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; infrared spectroscopy; quantum well lasers; GaSb; InGaAsSb-AlInGaAsSb; high-resolution methane spectroscopy; lateral etched-grating process; laterally-coupled index-grating distributed feedback laser diode; methane gas; molecular beam epitaxy; singlemode distributed feedback laser diodes; type-I quantum well active regions; vibrational absorption transitions; wavelength 3.23 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.0109
