• DocumentCode
    1483099
  • Title

    InAlAs APD with high multiplied responsivity-bandwidth product (MR-bandwidth product) of 168 A/W.GHz for 25 Gbit/s high-speed operations

  • Author

    Nada, Masahiro ; Muramoto, Yoshifumi ; Yokoyama, Haruki ; Ishibashi, Takayuki ; Kodama, Shinsuke

  • Author_Institution
    NTT Photonics Labs., NTT Corp., Atsugi, Japan
  • Volume
    48
  • Issue
    7
  • fYear
    2012
  • Firstpage
    397
  • Lastpage
    399
  • Abstract
    An InAlAs avalanche photodiode (APD) that has large bandwidth (>18.5 GHz) and high multiplied responsivity is demonstrated. The APD has a vertically illuminated structure with a thick absorption layer of 1 μm. The fabricated APD achieves the maximum 3 dB bandwidth of 23 GHz at the multiplied responsivity of 4.06 A/W and the 3 dB bandwidth of 18.5 GHz at high multiplied responsivity of 9.1 A/W. The multiplied responsivity-bandwidth product 18.5 × 9.1 = 168 A/W-GHz is the largest value ever reported for an APD for 25 Gbit/s operations.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; optical fibre networks; APD; InAlAs; MR-bandwidth product; absorption layer; avalanche photodiode; bandwidth 18.5 GHz; bandwidth 23 GHz; bit rate 25 Gbit/s; high-multiplied responsivity-bandwidth product; high-speed operations; optical fibre communication systems;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.0100
  • Filename
    6177788