Title :
SiC backside source grounding process for AlGaN/GaN HEMT by physical dicing method
Author :
Wang, Chingyue ; Lee, Woo Seung ; Cho, Sang June ; Kim, N.Y.
Author_Institution :
RFIC Centre, Kwangwoon Univ., Seoul, South Korea
Abstract :
A physical dicing method for realising backside source grounding is first proposed for high-power microwave AlGaN/GaN high electron mobility transistors (HEMTs) on 4-inch 477 m-thick silicon carbide (SiC) substrates. The successful implementation of the dicing-assisted source grounding technology in the processing of HEMTs is confirmed by DC and RF characterisation. When biased at 30 V, a 10 GHz output power density of 9.18 W/mm is achieved with an associated gain of 9.6 dB and power added efficiency of 50 for a 2 (200 0.5) m2 AlGaN/GaN HEMT with backside source grounding.
Keywords :
III-V semiconductors; aluminium compounds; earthing; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; silicon compounds; wide band gap semiconductors; AlGaN-GaN; DC characterisation; RF characterisation; SiC; backside source grounding process; dicing-assisted source grounding technology; frequency 10 GHz; gain 9.6 dB; high-power microwave HEMT; high-power microwave high electron mobility transistor; output power density; physical dicing method; power added efficiency; size 4 inch; size 477 m; voltage 30 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.0130
