Spin-valve films using exchange-coupled CrMnPt/Co structure

Author

Hoshiya, H. ; Soeya, S. ; Hamakawa, Y. ; Nakatani, R. ; Fuyama, M. ; Fukui, H. ; Sugita, Y.

Author_Institution

Central Res. Lab., Hitachi Ltd., Hitachi, Japan

Volume

33

Issue

5

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

2878

Lastpage

2880

Abstract

Spin-valve films using CrMnPt/Co structure were investigated. The exchange coupling field (Hex) applied on 3 nm thick Co pinned layers was increased by annealing from 190 Oe to 320-380 Oe. The annealing treatment necessary for the enhancement of the Hex was typically 230°C, 1 hr. The annealing distorted the crystal lattice of the CrMnPt films, which is likely to enhance the Hex. The blocking temperature was 320°C. The resistivity of the CrMnPt films was as high as 300 μΩcm resulting in low current shunting to antiferromagnetic layers in spin-valve films

Keywords

annealing; chromium alloys; cobalt; exchange interactions (electron); giant magnetoresistance; magnetic heads; magnetic multilayers; magnetic thin film devices; magnetoresistive devices; manganese alloys; platinum alloys; 1 h; 230 degC; 300 muohmcm; 320 degC; CrMnPt-Co; GMR; annealing; antiferromagnetic layers; blocking temperature; crystal lattice; current shunting; exchange-coupled structure; magnetic heads; pinned layers; resistivity; spin-valve films; Annealing; Antiferromagnetic materials; Coercive force; Conductivity; Glass; Head; Lattices; Magnetic fields; Magnetic films; Magnetoresistance; Production; Temperature; Temperature dependence;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.617784

Filename

617784