Magnetic and electrical properties of Co-Sm thin films deposited by dc magnetron sputtering

Author

Cho, H.S. ; Salem, J.R. ; Kellock, A.J. ; Beyers, R.B.

Author_Institution

Center for Mater. for Inf. Technol, Alabama Univ., Tuscaloosa, AL, USA

Volume

33

Issue

5

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

2890

Lastpage

2892

Abstract

We investigated the effects of oxidation on the magnetic and electrical properties of the Co-Sm films as a function of film composition and substrate temperature. Co-Sm films were prepared on Si(100) and quartz glass by dc magnetron sputtering, and were characterized by XRD, TEM, VSM, RBS, and 4-point probe. Amorphous Co-Sm thin films deposited at room temperature showed strong ferromagnetic properties. For the films deposited at elevated substrate temperature, the resistivity and coercivity increased, while the saturation magnetization decreased. These phenomena were mainly due to partial oxidation of the Co-Sm films, which was verified by RBS measurement and high-resolution TEM analysis

Keywords

Rutherford backscattering; cobalt alloys; coercive force; electrical resistivity; magnetic thin films; magnetisation; oxidation; samarium alloys; sputtered coatings; transmission electron microscopy; Co-Sm; Co-Sm thin film; DC magnetron sputtering; RBS; TEM; VSM; XRD; amorphous ferromagnet; coercivity; electrical properties; four-point probe; magnetic properties; oxidation; resistivity; saturation magnetization; Amorphous magnetic materials; Glass; Magnetic films; Magnetic properties; Oxidation; Saturation magnetization; Sputtering; Substrates; Temperature; X-ray scattering;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.617788

Filename

617788