• DocumentCode
    1483306
  • Title

    \\hbox {TiSi}_{2} Nanocrystal Metal Oxide Semiconductor Field Effect Transistor Memory

  • Author

    Zhou, Huimei ; Li, Bei ; Yang, Zheng ; Zhan, Ning ; Yan, Dong ; Lake, Roger K. ; Liu, Jianlin

  • Author_Institution
    Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
  • Volume
    10
  • Issue
    3
  • fYear
    2011
  • fDate
    5/1/2011 12:00:00 AM
  • Firstpage
    499
  • Lastpage
    505
  • Abstract
    A TiSi2 nanocrystal (NC) memory was fabricated. TiSi2 NCs were synthesized on SiO2 by annealing Ti covered Si NCs. Compared to the reference Si NC memory, both experiment and simulation results show that TiSi2 NC memory exhibits larger memory window, faster writing and erasing, and longer retention lifetime as a result of the metallic property of the silicide NCs. Due to thermally stable, CMOS compatible properties, TiSi2 NCs are highly promising for nonvolatile memory device application.
  • Keywords
    MOSFET; annealing; nanostructured materials; random-access storage; thermal stability; titanium compounds; TiSi2; annealing; memory window; metallic property; nanocrystal metal oxide semiconductor field effect transistor memory; nonvolatile memory device; retention lifetime; thermal stability; Annealing; FETs; Nanocrystals; Nonvolatile memory; Silicides; Writing; $hbox{TiSi}_{2}$ nanocrystal (NC); Nonvolatile memory (NVM);
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2010.2049271
  • Filename
    5458002
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1483306