Interband tunneling in heterostructure tunnel diodes

Author

Yang, Rui Q. ; Sweeny, M. ; Day, D. ; Xu, J.M.

Author_Institution

Dept. of Electr. Eng., Toronto Univ., Ont., Canada

Volume

38

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

442

Lastpage

446

Abstract

A particular type of tunnel diode, incorporating a wideband tunnel barrier, is studied. Simple analytic expressions are developed for estimating the tunneling coefficients to guide and optimize the design of heterostructure interband tunnel devices. The interband tunneling in such heterostructure tunnel diodes is modeled by a two-band Schrodinger equation. For a certain family of InGaAs/InA/GaAs p-n junction tunnel diodes, the interband transmission coefficients are calculated. The estimated peak currents are shown to compare very favorably with experimental results

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; p-n heterojunctions; tunnel diodes; InGaAs-InAlGaAs; heterostructure tunnel diodes; interband transmission coefficients; interband tunnel devices; p-n junction; peak currents; tunneling coefficients; two-band Schrodinger equation; wideband tunnel barrier; Conducting materials; Doping; Helium; Hydrogen; P-n junctions; Physics; Power dissipation; Power semiconductor switches; Semiconductor diodes; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.75152

Filename

75152