Title :
A Bendable-Channel FinFET for Logic Application
Author :
Kwon, Soon-Gyu ; Han, Jin-Woo ; Choi, Yang-Kyu
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fDate :
6/1/2010 12:00:00 AM
Abstract :
Bendable-channel fin field-effect transistor (FET) (FinFET) (BC-FinFET) is presented for the basic logic family that includes nand, nor , and pass gate. The BC-FinFET can replace the suspended-gate FET (SGFET), and its function is very similar to that of a double-gate MOSFET. The BC-FinFET is composed of an n-type and p-type MOSFETs, and hence, it can be applicable for logic circuits. Numerical simulations based on elementary characteristics extracted from the fabricated BC-FinFET have been carried out for nand and nor circuits from an input-output characteristics´ point of view. The proposed architecture can improve the standby and dynamic power consumption by reduction of the number of SGFETs and the size of the chip, while improving circuit performance.
Keywords :
MOSFET; NAND circuits; NOR circuits; logic circuits; numerical analysis; power consumption; bendable-channel FinFET; double-gate MOSFET; dynamic power consumption; field-effect transistor; logic application; logic circuits; numerical simulations; standby-dynamic power consumption; Bendable channel; CMOS; FinFET; double-gate (DG) MOSFET; logic circuit; suspended-gate FET (SGFET);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2046614