Current-voltage characteristics of thin film and bulk diamond treated in hydrogen plasma

Author

Albin, Sacharia ; Watkins, Linwood

Author_Institution

Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA

Volume

11

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

159

Lastpage

161

Abstract

It is shown that the electrical properties of thin film and bulk diamond can be systematically altered by hydrogen plasma treatment under controlled conditions. The concentration of electrically active hydrogen introduced in diamond can be determined from the current-voltage characteristics of hydrogenated samples containing traps. Hydrogen passivation of deep traps in diamond is clearly demonstrated.<>

Keywords

deep levels; diamond; electrical conductivity of crystalline semiconductors and insulators; electron traps; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; hole traps; impurity electron states; passivation; plasma CVD coatings; semiconductor thin films; C; C:H; H plasma treatment; bulk diamond; controlled conditions; current-voltage characteristics; deep traps; electrical properties; elemental semiconductors; hydrogenated samples; passivation; thin film; Conductivity; Current-voltage characteristics; High speed optical techniques; Hydrogen; Optical devices; Optical films; Passivation; Plasma measurements; Plasma properties; Transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.61780

Filename

61780