Hot carrier hardness analysis of submicrometer LDD devices

Author

Hänsch, Wilfried ; Mazure, Carlos ; Lill, A. ; Orlowski, Marius K.

Author_Institution

Siemens AG, Munchen, Germany

Volume

38

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

512

Lastpage

517

Abstract

A detailed analysis of the degradation of various lightly doped drain (LDD) devices is presented. Technology parameters that are varied are gate length, LDD n-dose, and energy for devices with 20-nm gate oxide. Different DC stress conditions are investigated. To gain insight into the degradation process a simulation tool is used that self-consistently calculates the oxide damage during a DC stress experiment. This enables the location and amount of oxide charges and interface states due to hot carrier injection to be obtained. The relationship between stress-induced damage and device hot carrier hardness is discussed

Keywords

hot carriers; insulated gate field effect transistors; semiconductor device models; 20 nm; DC stress conditions; LDD n-dose; device hot carrier hardness; gate length; gate oxide; hot carrier injection; lightly doped drain; oxide damage; simulation tool; stress-induced damage; submicrometer LDD devices; Brain modeling; Degradation; Doping; Hot carrier injection; Hot carriers; Implants; MOSFET circuits; Reliability engineering; Space technology; Stress;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.75160

Filename

75160