Multi-pillar surrounding gate transistor (M-SGT) for compact and high-speed circuits

The M-SGT has a three-dimensional structure, which consists of the source, gate, and drain arranged vertically. The gate electrode surrounds the crowded multipillar silicon islands. Because all the sidewalls of the pillars are used effectively as the transistor channel, the M-SGT has a high-shrinkage feature. The area occupied by the M-SGT can be shrunk to less than 30% of that occupied by the planar transistor. The small occupied area and the mesh-structured gate electrode lead to the small junction capacitance and the small gate electrode RC delay, resulting in high-speed operation. The fabrication of the M-SGT CMOS inverter chain is discussed. The propagation delay reduces to 40%, compared with the planar transistor inverter chain