Simple and efficient modeling of EPROM writing

Author

Fiegna, Claudio ; Venturi, Franco ; Melanotte, Massimo ; Sangiorgi, Enrico ; Riccò, Bruno

Author_Institution

Dept. of Electron., Bologna Univ., Italy

Volume

38

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

603

Lastpage

610

Abstract

A simple and efficient model for first-order simulation of the writing of n-channel erasable programmable ROM (EPROM) cells is presented. It allows the current injected into the gate insulator of the cell transistor to be calculated, accounting (at first order) both for the nonMaxwellian form of the electron energy distribution and for the nonlocal nature of carrier heating. The model is implemented as a postprocessor of a two-dimensional device simulator, and it is validated by means of a comparison with experimental data obtained with devices with effective channel lengths ranging from 1.4 to 0.5 μm

Keywords

EPROM; MOS integrated circuits; integrated memory circuits; semiconductor device models; 1.4 to 0.5 micron; EPROM writing; current injected into gate insulator; effective channel lengths; efficient model; electron energy distribution; experimental data; first-order simulation; n-channel erasable programmable ROM; nonMaxwellian form; nonlocal nature of carrier heating; postprocessor; two-dimensional device simulator; Computational modeling; Context modeling; EPROM; Electron emission; Energy barrier; Heating; Insulation; Read only memory; Thermionic emission; Writing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.75172

Filename

75172