High-performance a-Si:H thin-film transistor using lightly doped channel

Author

Sah, Wen-Jyh ; Lin, Jyh-Ling ; Lee, Si-Chen

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taiwan

Volume

38

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

676

Lastpage

678

Abstract

The fabrication of amorphous silicon thin-film transistors (TFTs) using a lightly phosphorus-doped channel is discussed. The transistors achieve an on-off current ratio exceeding six orders of magnitude and a field effect mobility of 0.4 cm²/V-s. These characteristics are found to be much better than those using an undoped channel with the same device structure. It is found that the incorporation of phosphorus in the channel can compensate the interface states and improve the transconductance of the TFT. It is shown that the fabrication of a depletion-mode TFT is fully compatible with the conventional enhancement-mode TFT process

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; phosphorus; semiconductor doping; silicon; thin film transistors; Si:H,P; amorphous Si:H; depletion-mode TFT; enhancement-mode TFT process; fabrication; field effect mobility; interface states compensation; lightly doped channel; on-off current ratio; thin-film transistor; transconductance; Amorphous silicon; Circuits; Doping profiles; Electron devices; FETs; MOSFETs; Optical devices; Optical films; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.75182

Filename

75182