Title :
Subharmonic 220- and 320-GHz SiGe HBT Receiver Front-Ends
Author :
Öjefors, Erik ; Heinemann, Bernd ; Pfeiffer, Ullrich R.
Author_Institution :
Inst. for High-Freq. & Commun. Technol., Univ. of Wuppertal, Wuppertal, Germany
fDate :
5/1/2012 12:00:00 AM
Abstract :
Monolithically integrated 220- and 320-GHz receiver front-ends manufactured in an engineering version of anfT/fmax=280/435-GHz SiGe technology are presented. Subharmonic mixing is provided by a Gilbert cell with stacked switching quads fed by quadrature 110/160-GHz local oscillator (LO) signals. The 220-GHz version of the front-end is equipped with an integrated LNA with a measured 15-dB gain and 28-GHz bandwidth. This front-end yields a conversion gain of 16 dB, an 18-dB single-sideband (SSB) noise figure (NF), and a 30-GHz bandwidth when pumped with a 0-dBm 110-GHz LO signal. The 320-GHz version of the front-end omits the low-noise amplifier and features an integrated × 9 LO multiplier chain to facilitate operation and characterization. A conversion gain of -14 dB and a 36-dB SSB NF is obtained over the 313-to-328-GHz frequency range. The presented circuits demonstrate that a fully integrated receiver front-end can be implemented up to submillimeter-wave frequencies in an SiGe HBT technology.
Keywords :
MMIC; heterojunction bipolar transistors; low noise amplifiers; oscillators; silicon compounds; Gilbert cell; SiGe; frequency 220 GHz; frequency 320 GHz; fully integrated receiver front-end; integrated LNA; low-noise amplifier; monolithically integrated receiver front-ends; quadrature local oscillator signals; stacked switching quads; subharmonic HBT receiver front-ends; subharmonic mixing; Couplers; Gain; Heterojunction bipolar transistors; Impedance matching; Mixers; Noise measurement; Receivers; Heterojunction bipolar transistors (HBTs); millimeter-wave receivers; monolithic microwave integrated circuit (MMIC) frequency converters; silicon;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2012.2190092