DocumentCode
1483787
Title
Recovery of high-field GaAs photoconductive semiconductor switches
Author
Zutavern, Fred J. ; Loubriel, Guillermo M. ; Malley, M. W O ; Schanwald, L.P. ; McLaughlin, D.L.
Author_Institution
Sandia Nat. Lab., Albuquerque, NM, USA
Volume
38
Issue
4
fYear
1991
fDate
4/1/1991 12:00:00 AM
Firstpage
696
Lastpage
700
Abstract
Three categories of circuits were explored to induce fast recovery, after lock-on by temporarily reducing the field across the switch. Measurements of recovery times from 35 to 80 ns, multiple monopolar and bipolar bursts at 5-40 MHz, and hold-off fields ranging from 5-44 kV/cm (corresponding to 15-66 kV across individual switches) are presented. A comparison is made of the different circuits used to induce recovery from lock-on, and the various factors that influence the recovery are discussed
Keywords
III-V semiconductors; gallium arsenide; photoconducting devices; semiconductor switches; 35 to 80 ns; GaAs; bipolar bursts; fast recovery; hold-off fields; lock-on; monopolar bursts; photoconductive semiconductor switches; recovery times; Electric resistance; Gallium arsenide; Impedance; Laser mode locking; Optical switches; Photoconducting devices; Power semiconductor switches; Stress; Switching circuits; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.75191
Filename
75191
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