Quantum phenomena in field-effect-controlled semiconductor nanostructures

Author

Ismail, Khalid E. ; Bagwell, Philip F. ; Orlando, Terry P. ; Antoniadis, Dimitri A. ; Smith, Henry I.

Author_Institution

Cairo Univ., Giza, Egypt

Volume

79

Issue

8

fYear

1991

fDate

8/1/1991 12:00:00 AM

Firstpage

1106

Lastpage

1116

Abstract

Quantum effects resulting from sub-100 nm features in planar, field-effect-controlled semiconductor structures or devices are discussed, and experimental results are compared with calculations. These devices are based on the GaAs-AlGaAs modulation-doped field-effect transistor (MODFET) and include grating-gate lateral surface superlattices. (LSSLs), grid-gate LSSLs, planar-resonant-tunneling field-effect transistors (PRESTFETs), multiple parallel quantum wires (MPQWs), and arrays of quantum dots (QDs). In contrast to conventional, epitaxially grown vertical quantum structures, planar structures offer the opportunity for electron confinement in three, two, and one dimensions and the flexibility of electrical tuning of quantum effects

Keywords

field effect devices; high electron mobility transistors; quantum interference devices; resonant tunnelling devices; semiconductor device models; semiconductor quantum dots; semiconductor quantum wires; semiconductor superlattices; GaAs-AlGaAs; MODFET; RTD; electron confinement; field-effect transistor; field-effect-controlled; grating-gate; grid-gate; lateral surface superlattices.; modulation-doped; multiple parallel quantum wires; planar structures; planar-resonant-tunneling; quantum dot array; quantum effects; semiconductor nanostructures; Electrons; Epitaxial layers; FETs; Fabrication; MODFETs; Quantum computing; Quantum dots; Semiconductor nanostructures; Switches; Wires;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.92070

Filename

92070