Title :
Contamination of silicon surface due to contact with solid polymers
Author :
Iyer, Nandini ; Saka, Nannaji ; Chun, Jung-Hoon
Author_Institution :
Dept. of Mech. Eng., MIT, Cambridge, MA, USA
fDate :
5/1/2001 12:00:00 AM
Abstract :
The present research investigates material transfer associated with the contact between polymers and silicon surfaces. Material transfer from a variety of solid polymers (UHMWPE, Teflon, KEL-F, PMMA, Nylon 66, and PEEK) was studied and characterized by optical microscopy, scanning electron microscopy, atomic force microscopy, and by computer image analysis. Experimental results suggest that material transfer is affected by the Hertz contact area. The number of particles and the total particle area increase with an increase in load and a decrease in the Young´s modulus. Also, material transfer increases when the contacting surfaces are rougher. Friction appears to be a weak parameter in the material transfer phenomenon. Additionally, hardness is significant only when normal loading is great enough to initiate plastic deformation in the polymer
Keywords :
Young´s modulus; atomic force microscopy; elemental semiconductors; friction; hardness; optical microscopy; plastic deformation; scanning electron microscopy; semiconductor technology; silicon; spin coating; Hertz contact area; KEL-F; Nylon 66; PEEK; PMMA,; Si; Teflon; UHMWPE; Young´s modulus; atomic force microscopy; computer image analysis; contamination; friction; hardness; material transfer; optical microscopy; plastic deformation; scanning electron microscopy; solid polymers; total particle area; Atom optics; Atomic force microscopy; Electron optics; Optical materials; Optical microscopy; Optical polymers; Scanning electron microscopy; Silicon; Solids; Surface contamination;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
