Title :
A 12-kV High-Voltage Semiconductor Switch Based on 76-mm Reverse-Switching Dynistors
Author :
He, Xiaoping ; Wang, Haiyang ; Xue, Binjie ; Chen, Weiqing ; Zhou, Jingzhi ; Tang, Junping
Author_Institution :
Northwest Inst. of Nucl. Technol. (NINT), Xi´´an, China
Abstract :
This paper describes the construction and experimental tests of a 12-kV high-voltage high-action generator based on reverse-switching dynistor (RSD) assembly. The main RSD unit consists of seven 76-mm-diameter dynistor pieces connected in series with a blocking voltage of about 2.4 kV, a magnetic switch based on a 1K101 amorphous alloy core, the trigger system based on a saturable transformer, and a 16-mm RSD assembly; the trigger current could reach 2 kA in amplitude with 1-μs duration under 10 kV. The working voltage rate of this RSD unit is about 8-12 kV. Experiment on a 2.2-mF capacitor test bed under 12 kV working voltage, the switch current amplitude reached 150 kA with 300-μs duration; the transferred charge is about 26.5 C and the action is 2.94 MA2s, respectively.
Keywords :
magnetic switching; power semiconductor switches; pulse generators; pulsed power switches; transformers; 1K101 amorphous alloy core; RSD assembly; capacitance 2.2 mF; capacitor testbed; current 150 kA; current 2 kA; high-voltage high-action generator; high-voltage semiconductor switch; magnetic switch; pulse generator; reverse-switching dynistors; saturable transformer; size 16 mm; size 76 mm; switch current amplitude; time 1 mus; time 300 mus; trigger system; voltage 10 kV; voltage 12 kV; Magnetic switch; pulse generator; reverse-switching dynistor (RSD); saturable transformer; semiconductor switch;
Journal_Title :
Plasma Science, IEEE Transactions on
DOI :
10.1109/TPS.2010.2047870
