Title :
Pre-silicon parameter generation methodology using BSIM3 for circuit performance-oriented device optimization
Author :
Miyama, Mikako ; Kamohara, Shiro ; Hiraki, Mitsuru ; Onozawa, Kazunori ; Kunitomo, Hisaaki
Author_Institution :
Semicond. & Integrated Circuits Div., Hitachi Ltd., Tokyo, Japan
fDate :
5/1/2001 12:00:00 AM
Abstract :
We present a physical parameter extraction methodology for BSIM3v3 to generate accurate pre-silicon parameters (parameters created before device fabrication). Using this method, the parameters of the 0.20-μm process device can be generated from a 0.25-μm technology with 5% accuracy in a few minutes. We applied this method in optimizing the devices of our microprocessor in the early stages of design
Keywords :
VLSI; circuit optimisation; circuit simulation; digital simulation; integrated circuit design; integrated circuit modelling; parameter estimation; 0.2 micron; BSIM3; IC design; VLSI; microprocessor; parameter generation methodology; performance-oriented device optimization; physical parameter extraction methodology; Capacitance; Character generation; Design optimization; Energy consumption; Integrated circuit interconnections; Optimization methods; Optimized production technology; Power supplies; Predictive models; Threshold voltage;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
