DocumentCode :
1484155
Title :
Nanostructure fabrication
Author :
Ahmed, Haroon
Author_Institution :
Cavendish Lab., Cambridge Univ., UK
Volume :
79
Issue :
8
fYear :
1991
fDate :
8/1/1991 12:00:00 AM
Firstpage :
1140
Lastpage :
1148
Abstract :
Quantum transport effects have been explored in semiconductors using a two-dimensional electron gas confined by lateral nanostructures. Once the lateral sizes and the layer thickness are reduced to be smaller than the phase coherence length of the electrons in the material, quantum effects become pronounced; it is this aspect of nanofabrication that is considered. The structures defined by a number of different methods are considered and the techniques required to make them are described. Special electron beam lithography systems and processes and a range of focused ion beam techniques and processing methods designed specifically for nanofabrication are discussed. After defining the types of structures used to investigate the physics, the physical phenomena explored with them are considered briefly
Keywords :
electron beam lithography; integrated circuit technology; ion beam applications; semiconductor technology; 2D electron gas; FIB techniques; electron beam lithography; focused ion beam; lateral nanostructures; nanofabrication; nanostructure fabrication; processing methods; quantum transport effects; semiconductors; two-dimensional electron gas; Design methodology; Electron beams; Fabrication; Ion beams; Lithography; Nanofabrication; Nanostructured materials; Physics; Process design; Semiconductor materials;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/5.92073
Filename :
92073
Link To Document :
بازگشت