DocumentCode
1484155
Title
Nanostructure fabrication
Author
Ahmed, Haroon
Author_Institution
Cavendish Lab., Cambridge Univ., UK
Volume
79
Issue
8
fYear
1991
fDate
8/1/1991 12:00:00 AM
Firstpage
1140
Lastpage
1148
Abstract
Quantum transport effects have been explored in semiconductors using a two-dimensional electron gas confined by lateral nanostructures. Once the lateral sizes and the layer thickness are reduced to be smaller than the phase coherence length of the electrons in the material, quantum effects become pronounced; it is this aspect of nanofabrication that is considered. The structures defined by a number of different methods are considered and the techniques required to make them are described. Special electron beam lithography systems and processes and a range of focused ion beam techniques and processing methods designed specifically for nanofabrication are discussed. After defining the types of structures used to investigate the physics, the physical phenomena explored with them are considered briefly
Keywords
electron beam lithography; integrated circuit technology; ion beam applications; semiconductor technology; 2D electron gas; FIB techniques; electron beam lithography; focused ion beam; lateral nanostructures; nanofabrication; nanostructure fabrication; processing methods; quantum transport effects; semiconductors; two-dimensional electron gas; Design methodology; Electron beams; Fabrication; Ion beams; Lithography; Nanofabrication; Nanostructured materials; Physics; Process design; Semiconductor materials;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/5.92073
Filename
92073
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