• DocumentCode
    1484155
  • Title

    Nanostructure fabrication

  • Author

    Ahmed, Haroon

  • Author_Institution
    Cavendish Lab., Cambridge Univ., UK
  • Volume
    79
  • Issue
    8
  • fYear
    1991
  • fDate
    8/1/1991 12:00:00 AM
  • Firstpage
    1140
  • Lastpage
    1148
  • Abstract
    Quantum transport effects have been explored in semiconductors using a two-dimensional electron gas confined by lateral nanostructures. Once the lateral sizes and the layer thickness are reduced to be smaller than the phase coherence length of the electrons in the material, quantum effects become pronounced; it is this aspect of nanofabrication that is considered. The structures defined by a number of different methods are considered and the techniques required to make them are described. Special electron beam lithography systems and processes and a range of focused ion beam techniques and processing methods designed specifically for nanofabrication are discussed. After defining the types of structures used to investigate the physics, the physical phenomena explored with them are considered briefly
  • Keywords
    electron beam lithography; integrated circuit technology; ion beam applications; semiconductor technology; 2D electron gas; FIB techniques; electron beam lithography; focused ion beam; lateral nanostructures; nanofabrication; nanostructure fabrication; processing methods; quantum transport effects; semiconductors; two-dimensional electron gas; Design methodology; Electron beams; Fabrication; Ion beams; Lithography; Nanofabrication; Nanostructured materials; Physics; Process design; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/5.92073
  • Filename
    92073