Title :
Ion milling properties of laterally emitting thin-film electroluminescent materials
Author :
Barros, Sara Otero ; Stevens, Robert ; Thomas, Clive B. ; Cranton, Wayne ; Craven, Mark
Author_Institution :
Dept. of Electr. & Electron. Eng., Nottingham Trent Univ., UK
fDate :
5/1/2001 12:00:00 AM
Abstract :
A study has been undertaken of the ion milling properties of ZnS:Mn, Y2O3, Si3N4, SiO2, SiOxNy, and Al versus the etching time, the acceleration voltage, and the angle of incidence of the ion beam. Different ZnS:Mn etched profiles have been fabricated by modifying the angle of incidence; these are in agreement with the reported simulations
Keywords :
II-VI semiconductors; electroluminescent devices; elemental semiconductors; manganese; phosphors; silicon; sputter etching; yttrium compounds; zinc compounds; Si3N4; SiO2; SiON; ZnS:Mn-Y2O3-Si; acceleration voltage; angle of incidence; etching time; ion milling properties; laterally emitting thin-film electroluminescent materials; Apertures; Argon; Electroluminescent devices; Ion beams; Milling; Resists; Sputter etching; Sputtering; Thin film devices; Transistors;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
