Improved performance of 2-μm GaInAs strained quantum-well lasers on InP by increasing carrier confinement

Author

Serries, D. ; Peter, Minin ; Kiefer, R. ; Winkler, K. ; Wagner, J.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

Volume

13

Issue

5

fYear

2001

fDate

5/1/2001 12:00:00 AM

Firstpage

412

Lastpage

414

Abstract

We have fabricated and analyzed strained GaInAs quantum-well diode lasers emitting at wavelengths above 2 μm, grown by metal-organic chemical vapor phase epitaxy on InP substrates. To study the effect of carrier confinement on laser performance, lasers grown with nearly lattice matched ternary GaInAs barriers and quaternary GaInAsP barriers were compared. The use of quaternary barriers improves the device performance in terms of output power, emission wavelength, characteristic temperature, differential quantum efficiency, and power efficiency. Internal losses and internal quantum efficiency remain unchanged. At a heat sink temperature of 330 K index guided diode lasers with GaInAsP-barriers emitting at 2.092 μm showed a continuous-wave (CW) output power of 42 mW/facet.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; heat sinks; indium compounds; laser transitions; optical fabrication; optical losses; quantum well lasers; semiconductor growth; 2 mum; 2.092 mum; 330 K; 42 mW; CW; Ga/sub 0.25/In/sub 0.75/As -Ga/sub 0.49/In/sub 0.51/As/sub 0.60/P/sub 0.40/; GaInAs; GaInAs strained quantum-well lasers; GaInAsP; InP; InP substrates; carrier confinement; characteristic temperature; continuous-wave output power; differential quantum efficiency; emission wavelength; heat sink temperature; index guided diode lasers; internal losses; internal quantum efficiency; laser performance; metal-organic chemical vapor phase epitaxy; nearly lattice matched ternary GaInAs barriers; output power; power efficiency; quaternary GaInAsP barriers; Carrier confinement; Chemical analysis; Chemical lasers; Diode lasers; Epitaxial growth; Indium phosphide; Power generation; Quantum well lasers; Substrates; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.920734

Filename

920734