A 3-V 4-GHz nMOS voltage-controlled oscillator with integrated resonator

Author

Soyuer, Mehmet ; Jenkins, Keith A. ; Burghartz, Joachim N. ; Hulvey, Michael D.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

31

Issue

12

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2042

Lastpage

2045

Abstract

A 4-GHz fully-monolithic nMOS voltage-controlled oscillator circuit implemented in a 0.5-μm BiCMOS technology is presented. The tuning range is 9% with an on-chip varactor-tuned resonator and a control voltage of 0-3 V. The measured phase noise is -85 dBc/Hz at 100 kHz and -106 dBc/Hz at 1 MHz offset. The circuit draws 8 mA from a 3 V supply including the reference branch bias current. Even with the supply voltage and the variation in control voltage reduced to 2.3 V, the VCO has a tuning range of 8%

Keywords

BiCMOS analogue integrated circuits; MMIC oscillators; circuit tuning; integrated circuit measurement; integrated circuit noise; phase noise; resonators; voltage-controlled oscillators; 0 to 3 V; 0.5 mum; 4 GHz; 8 mA; BiCMOS technology; VCO; control voltage; fully-monolithic nMOS voltage-controlled oscillator circuit; integrated resonator; on-chip varactor-tuned resonator; phase noise; reference branch bias current; supply voltage; tuning range; BiCMOS integrated circuits; Circuit optimization; Integrated circuit measurements; Integrated circuit technology; MOS devices; Noise measurement; Phase measurement; Tuning; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.545829

Filename

545829