Title :
Long-wavelength type-II photodiodes operating at room temperature
Author :
Mohseni, H. ; Razeghi, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA
fDate :
5/1/2001 12:00:00 AM
Abstract :
The operation of uncooled InAs-GaSb superlattice photodiodes with a cutoff wavelength of /spl lambda//sub c/=8 μm and a peak detectivity of 1.2×10/sup 8/ cmHz12//W at zero bias is demonstrated. The detectivity is similar to the best uncooled HgCdTe detectors and microbolometers. However, the R0A product is more than two orders of magnitude higher than HgCdTe and the device is more than four orders of magnitude faster than microbolometers. These features combined with their low 1/f noise and high uniformity make these type-II photodiodes an excellent choice for uncooled high-speed IR imaging arrays.
Keywords :
1/f noise; III-V semiconductors; gallium compounds; image sensors; indium compounds; infrared imaging; photodiodes; semiconductor superlattices; 8 mum; InAs-GaSb; R/sub 0/A product; cutoff wavelength; detectivity; high uniformity; long-wavelength type-II photodiodes; low 1/f noise; microbolometers; peak detectivity; room temperature; type-II photodiodes; uncooled HgCdTe detectors; uncooled InAs-GaSb superlattice photodiodes; uncooled high-speed IR imaging arrays; zero bias; Infrared detectors; Optical imaging; Optical materials; Photodiodes; Photonic band gap; Quantum computing; Radiative recombination; Substrates; Superlattices; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
