DocumentCode
1484490
Title
An expansion method for calculation of low-frequency Hall effect and magneto-resistance
Author
Mey, Ir G De
Author_Institution
Ghent State University, Laboratory of Electronics, Ghent, Belgium
Volume
44
Issue
6
fYear
1974
fDate
6/1/1974 12:00:00 AM
Firstpage
321
Lastpage
325
Abstract
The potential equation in three dimensions for a semiconductor, placed in an external magnetic field, is derived. This equation is solved by an expansion technique. The first-order expansion gives the Hall effect, whereas the second-order describes the magneto-resistance effect. The theory is applied to a rectangular and a cylindrical volume, which are treated analytically.
Keywords
Hall effect; magnetoresistance; semiconductors; Hall effect; Hall generators; LF; expansion method; magneto resistance; potential equation; semiconductor;
fLanguage
English
Journal_Title
Radio and Electronic Engineer
Publisher
iet
ISSN
0033-7722
Type
jour
DOI
10.1049/ree.1974.0088
Filename
5269434
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